▎ 摘　　要

NOVELTY - Preparation of graphene involves forming 1-5C graphene layer on surface of a polycrystalline cobalt thin-film formed using a magnetron sputtering sputter coating system as substrate, by radio frequency-plasma enhanced chemical vapor deposition at less than 800 degrees C and less than 78 sccm for 40 seconds. USE - Preparation of graphene used for fabricating electronic device and optical device. ADVANTAGE - The method enables economical preparation of graphene having high quality, specific surface area and excellent transparency, flexibility and electroconductivity, within short period of time.