• 专利标题:   Preparing flexible piezoresistive tension sensor by laser comprises e.g. adding graphene oxide dispersion on surface of transfer substrate, drying, and using laser to etch graphene oxide layer to reduce and forming graphene pattern.
  • 专利号:   CN110823420-A
  • 发明人:   HONG J, WU J
  • 专利权人:   UNIV SOUTHEAST
  • 国际专利分类:   C01B032/184, C01B032/194, C01B032/198, G01L001/18
  • 专利详细信息:   CN110823420-A 21 Feb 2020 G01L-001/18 202023 Pages: 9 Chinese
  • 申请详细信息:   CN110823420-A CN11080855 07 Nov 2019
  • 优先权号:   CN11080855

▎ 摘  要

NOVELTY - Preparing flexible piezoresistive tension sensor by laser comprises (a) adding graphene oxide dispersion on surface of transfer substrate, and forming graphene oxide thin film layer after drying, (b) using a laser to etch the graphene oxide layer to reduce and forming graphene pattern, (c) immersing and rinsing remaining graphene oxide in de-ionized water, retaining graphene pattern, and drying, (d) adding nasal membrane to the graphene layer on the surface of the transfer substrate, and forming a transparent thin film after drying, and (e) peeling off formed transparent film from the transfer substrate to obtain a piezoresistive tensile sensor with a graphene pattern attached. USE - The method is useful for preparing flexible piezoresistive tension sensor by laser. ADVANTAGE - The tension sensor: has ultra-light, thin, skin fit, good durability and high sensitivity. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for flexible piezoresistive tension sensor by laser.