• 专利标题:   Preparation of conductive silicon carbide involves immersing honeycomb silicon carbide in cationic polyelectrolyte solution, ultrasonically dispersing, drying and immersing in mixed solution of e.g. graphene oxide and organic binder.
  • 专利号:   CN110407602-A
  • 发明人:   WU Y, LIANG H, CHEN X, CHEN C, HU L
  • 专利权人:   CHINA BUILDING MATERIALS ACAD
  • 国际专利分类:   C04B035/565, C04B035/622, C04B038/00, C04B041/89
  • 专利详细信息:   CN110407602-A 05 Nov 2019 C04B-038/00 201993 Pages: 9 Chinese
  • 申请详细信息:   CN110407602-A CN10640333 16 Jul 2019
  • 优先权号:   CN10640333

▎ 摘  要

NOVELTY - Preparation of conductive silicon carbide involves immersing honeycomb silicon carbide in cationic polyelectrolyte solution, ultrasonically dispersing, drying, immersing in a mixed solution of graphene oxide, inorganic binder and organic binder, ultrasonically dispersing and drying. USE - Preparation of conductive silicon carbide (claimed). ADVANTAGE - The method economically produces environmentally-friendly conductive honeycomb silicon carbide by a simple method which utilizes graphene oxide to improve the electrical conductivity of honeycomb silicon carbide and utilizes cationic polyelectrolyte to change the surface electrical properties of the conductive silicon carbide.