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  • 专利标题:   Preparing copper indium sulfide-graphene composite film material involves adding calcium chloride, indium and sulfur powder to organic solvent containing oxidized graphene to obtain electric deposition solution.
  • 专利号:   CN104818504-A, CN104818504-B
  • 发明人:   WANG P, YUAN J
  • 专利权人:   UNIV BEIJING CHEM TECHNOLOGY, UNIV BEIJING CHEM TECHNOLOGY
  • 国际专利分类:   C25D015/00, C25D003/56, C25D005/50
  • 专利详细信息:   CN104818504-A 05 Aug 2015 C25D-003/56 201578 Pages: 8 Chinese
  • 申请详细信息:   CN104818504-A CN10164431 09 Apr 2015
  • 优先权号:   CN10164431

▎ 摘　　要

NOVELTY - Preparing copper indium sulfide-graphene composite film material involves adding calcium chloride, indium and sulfur powder to organic solvent containing oxidized graphene to obtain electric deposition solution. The obtained solution is deposited on a conductive substrate to obtained the desired product. USE - Method for preparing copper indium sulfide-graphene composite film material (claimed). ADVANTAGE - The method enables to prepare copper indium sulfide-graphene composite film material in simple and cost-effective manner.