▎ 摘　　要

NOVELTY - The utility model claims a device with GaN HEMT cell structure of graphene buried source electrode and longitudinal grid, source electrode is connected by a metal material and graphene buried radiating layer by a vertical gate structure. the length of the transverse channel opening mode of traditional HEMT device into short longitudinal channel open mode, a gate controlled by long transverse current channel into the short longitudinal current control channel device using short gate sidewall channel to realize the switch control. so as to effectively reduce the on resistance of the device, which can realize high-density cell structure, improving effective utilization of device area and unit area power density, and the graphene excellent conductivity and heat generated by the device active area, can help achieve high power GaN HEMT device, increasing the high temperature reliability of the device.