• 专利标题:   Patterning a graphene in the manufacturing of semiconductor chip, by forming a DNA pattern and forming graphene on pattern, where pattern is formed by forming metal ion pattern on a substrate and adsorbing a DNA structure on ion pattern.
  • 专利号:   KR2014141541-A, KR1473853-B1
  • 发明人:   JEONG S, LEE J, PARK I K, PARK J H, PARK S, ROH Y, YEON S
  • 专利权人:   UNIV SUNGKYUNKWAN RES BUSINESS FOUND
  • 国际专利分类:   B82B003/00, C01B031/04, C23C016/18
  • 专利详细信息:   KR2014141541-A 10 Dec 2014 C01B-031/04 201503 Pages: 31
  • 申请详细信息:   KR2014141541-A KR139696 16 Oct 2014
  • 优先权号:   KR075840

▎ 摘  要

NOVELTY - Patterning a graphene, comprises forming a DNA pattern, and forming graphene on the DNA pattern. The DNA pattern is formed by forming a metal ion or positive charge pattern on a substrate, and adsorbing a DNA structure on the metal ion or positive charge pattern by incorporating the metal particles on the DNA structure. USE - The method is useful for patterning a graphene (claimed) in the manufacturing of semiconductor chip. ADVANTAGE - The method is capable of uniformly and simply patterning the graphene with high quality.