• 专利标题:   Method for manufacturing e.g. graphene antidot lattice that is utilized for device fabrication, involves forming self-assembled nanostructure, and etching graphene thin film from nanostructure, where graphene thin film is utilized as mask.
  • 专利号:   KR2011081519-A, KR1630390-B1
  • 发明人:   KIM S O, KIM J Y, CHOI S Y, KIM J E, JEONG S J, HAN T H
  • 专利权人:   KOREA ADV INST SCI TECHNOLOGY, KOREA ADVANCED INST SCI TECHNOLOGY
  • 国际专利分类:   B82B001/00, B82B003/00
  • 专利详细信息:   KR2011081519-A 14 Jul 2011 B82B-003/00 201268 Pages: 20
  • 申请详细信息:   KR2011081519-A KR001720 08 Jan 2010
  • 优先权号:   KR001720

▎ 摘  要

NOVELTY - A graphene nanostructure manufacturing method involves forming a graphene thin film on a substrate, and forming a self-assembled material thin film on the formed graphene thin film. A self-assembled nanostructure is formed using a thermal process or a solvent annealing process. The graphene thin film is etched from the self-assembled nanostructure, where the graphene thin film is utilized as a mask. USE - Method for manufacturing a graphene nanostructure e.g. graphene antidot lattice and graphene nanoribbon (all claimed), which is utilized for device fabrication. ADVANTAGE - The method enables controlling opening of a band gap through nano-scale modulation of a graphene structure, thus controlling electrical property of the graphene in an effective manner. The method enables device fabrication in an efficient manner. The method enables utilizing a magnetism granule that includes the block copolymer, thus enabling mass production of the graphene nanostructure in a parallel manner. DESCRIPTION OF DRAWING(S) - The drawing shows a perspective view of blocks during a manufacturing process of a graphene nanostructure.