• 专利标题:   Surface exposure additive material based graphite alkenyl field effect transistor gas sensor manufacturing method, involves taking out processed graphite alkenyl field effect transistor gas sensor, and performing surface treatment.
  • 专利号:   CN113176303-A, CN113176303-B
  • 发明人:   SHEN L, BAI D, LIU F, XIE D, LV F, QIU M, TIAN Z
  • 专利权人:   UNIV NANJING AERONAUTICS ASTRONAUTICS
  • 国际专利分类:   B82Y015/00, B82Y040/00, G01N027/12
  • 专利详细信息:   CN113176303-A 27 Jul 2021 G01N-027/12 202169 Pages: 6 Chinese
  • 申请详细信息:   CN113176303-A CN10267534 11 Mar 2021
  • 优先权号:   CN10267534

▎ 摘  要

NOVELTY - The method involves establishing a field effect transistor (FET) gas sensor three-dimensional model to-be processed by using a computer three-dimensional modeling software. A working platform is orderly placed in a photosensitive resin liquid tank added with silicon oxide, graphene and copper powder. The working platform is transferred to a cleaning tank. A formed portion is dried by a hot air drying groove to clean mutual pollution of different photosensitive resin liquid. The formed portion is taken out. The forming portion is put in copper sulfate plating solution for electroplating until thickness of a plating layer reaches 1mm. A processed graphite alkenyl field effect transistor gas sensor is taken out. Surface treatment is performed. USE - Surface exposure additive material based graphite alkenyl FET gas sensor manufacturing method. ADVANTAGE - The method enables simplifying manufacturing process and reducing manufacturing cost of a graphene-based FET gas sensor. DESCRIPTION OF DRAWING(S) - The drawing shows a flow diagram illustrating a surface exposure additive material based graphite alkenyl FET gas sensor manufacturing method. (Drawing includes non-English language text).