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  • 专利标题:   Storage device, comprises insulating substrate, lower electrode, lower barrier layer graphene, resistive functional layer and upper electrode, where resistive functional layer is located on lower barrier layer graphene.
  • 专利号:   CN104810476-A, WO2016176936-A1, US2018122856-A1
  • 发明人:   LV H, LIU M, LIU Q, SUN H, ZHANG K, BENAGI R, BANERJEE W
  • 专利权人:   INST MICROELECTRONICS CHINESE ACAD SCI, INST MICROELECTRONICS CHINESE ACAD SCI
  • 国际专利分类:   H01L045/00, H01L027/105, G11C013/00, H01L027/24
  • 专利详细信息:   CN104810476-A 29 Jul 2015 H01L-045/00 201574 Pages: 9 Chinese
  • 申请详细信息:   CN104810476-A CN10226908 07 May 2015
  • 优先权号:   CN10226908

▎ 摘　　要

NOVELTY - A storage device comprises insulating substrate, lower electrode, lower barrier layer graphene, resistive functional layer and upper electrode, where the resistive functional layer is located on lower barrier layer graphene, the lower graphene barrier layer and/or the upper graphene barrier layer under the action of an external electric field are capable of preventing lower electrode metal ions/atoms in metal materials diffuse into the barrier layer to enter the resistive functional layer. USE - Storage device. ADVANTAGE - The device has improved reliability and flame-retardant capacity. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a method for manufacturing storage device.