▎ 摘　　要

NOVELTY - The method comprises (i) mixing aluminum nitride powder, silicon nitride powder and sintering auxiliary agent, ball milling, rotary evaporating, drying, sieving to obtain ceramic powder, dry pressing in a mold, and sintering under nitrogen environment to obtain aluminum nitride ceramic substrate; (ii) mixing titanium powder, titanium carbide powder, aluminum powder graphene copper powder and absolute ethyl alcohol and ball milling to obtain ceramic slurry, coating the ceramic slurry to two sides surface of ceramic substrate, drying, hot pressing and sintering in nitrogen atmosphere to obtain pretreated ceramic substrate; and (iii) coating solder on ceramic slurry on two sides of pretreated ceramic substrate to form solder layer, cleaning the copper foil in acetone solution, ultrasonically dispersing, using absolute ethyl alcohol, ultrasonically cleaning with deionized water, drying, fixing the dried copper foil on two sides of the pretreated ceramic substrate, and vacuum brazing. USE - The method is useful for preparing high reliability aluminum nitride copper-clad ceramic substrate, which is used in a semiconductor refrigerator and preparation semiconductor module e.g. large scale integrated circuit and large power LED. ADVANTAGE - The ceramic substrate: meets the requirements of high strength, high thermal conductivity and low loss, and has excellent comprehensive performance and good practicality. The method: has reasonable process design and simple operation, can effectively improve the interface wettability between aluminum nitride and metal copper, so that the aluminum nitride and the copper sheet are closely combined, hence the copper clad substrate has the advantages of high peel strength and high reliability, and is suitable for the preparation of semiconductor refrigerators and power semiconductor modules, especially large-scale, ultra-large-scale integrated circuits and high-power LEDs, with high practicability. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for high reliability aluminum nitride copper-clad ceramic substrate prepared by the above-mentioned method.