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  • 专利标题:   Method for forming graphene pattern, involves forming pattern on master board, forming metal layer on imprint stamp, forming graphene on metal layer, transferring graphene on substrate, and forming graphene pattern using imprinting method.
  • 专利号:   KR2011136340-A, KR1220421-B1
  • 发明人:   PARK H H, YOO S H, KANG H K, LEE J G, KO C G, JUNG S H, SHIN H B, SONG H Y, JANG M C
  • 专利权人:   KOREA ADVANCED NANO FAB CENT
  • 国际专利分类:   B29C033/38, B82B003/00, C01B031/04
  • 专利详细信息:   KR2011136340-A 21 Dec 2011 B82B-003/00 201266 Pages: 11
  • 申请详细信息:   KR2011136340-A KR056267 15 Jun 2010
  • 优先权号:   KR056267

▎ 摘　　要

NOVELTY - A graphene pattern formation method involves forming a pattern (205) on a master board (200) to obtain an imprint stamp (210). A metal layer (220) containing graphite catalyst is formed on the imprint stamp, and a graphene (230) is formed on the metal layer. The graphene is transferred on a substrate (240) for element fabrication, and a graphene pattern (250) is formed by applying imprinting method. USE - Method for forming a graphene pattern. ADVANTAGE - The method enables forming the graphene pattern in an efficient and an eco-friendly manner. DESCRIPTION OF DRAWING(S) - The drawing shows a cross-sectional view illustrating a method for forming a graphene pattern. Master board (200) Pattern (205) Imprint stamp (210) Metal film (220) Graphene (230) Substrate (240) Graphene pattern (250)