▎ 摘　　要

NOVELTY - Preparation of multilayer graphene quantum carbon-based two-dimensional semiconductor material involves (a) sintering the polyimide film at specified temperature, removing hydrogen, oxygen and nitrogen atoms from the film to form microcrystalline carbon precursor, and (b) adjusting the temperature, graphitizing the carbon precursor and doping the nano-metallic material in carbon precursor to form quantum dots in the multilayer graphene. USE - Preparation of multilayer graphene quantum carbon-based two-dimensional semiconductor material (claimed). ADVANTAGE - The preparation of multilayer graphene quantum carbon-based two-dimensional semiconductor material is simple, economical and has high yield. The prepared semiconductor material has hexagonal planar molecular structure, excellent flexibility and tortuosity. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a multi-layered graphene quantum carbon-based semiconductor material.