• 专利标题:   In-situ growing of graphene in aluminum current collector surface of lithium ion battery by soaking aluminum foil in sodium hydroxide and hydrochloric acid, etching, spin-coating with graphene oxide solution, drying and depositing.
  • 专利号:   CN106450154-A, CN106450154-B
  • 发明人:   QI J, LIN J, LIU Y, GU H, FEI W, FENG J, JIA H
  • 专利权人:   HARBIN INST TECHNOLOGY
  • 国际专利分类:   H01M004/04, H01M004/66
  • 专利详细信息:   CN106450154-A 22 Feb 2017 H01M-004/04 201726 Pages: 9 Chinese
  • 申请详细信息:   CN106450154-A CN11082749 30 Nov 2016
  • 优先权号:   CN11082749

▎ 摘  要

NOVELTY - In-situ growing of graphene in aluminum current collector surface of lithium ion battery involves ultrasonically cleaning aluminum foil with acetone solution and anhydrous ethanol, soaking in sodium hydroxide solution and hydrochloric acid solution, etching with hydrochloric acid solution, washing using deionized water and anhydrous ethanol, spin-coating with graphene oxide solution, drying in oven, entering into plasma chemical vapor depositing vacuum device, vacuumizing, filling hydrogen gas and argon gas, depositing, introducing carbon source gas and cooling to room temperature. USE - Method for in-situ growing of graphene in aluminum current collector surface of lithium ion battery. DETAILED DESCRIPTION - In-situ growing of graphene in aluminum current collector surface of lithium ion battery comprises ultrasonically cleaning aluminum foil with acetone solution and anhydrous ethanol for 1-5 minutes, soaking in 0.1-6 mol/L sodium hydroxide solution for 0.5-2 minutes, soaking in 0.1-5 mol/L hydrochloric acid solution for 0.5-2 minutes to obtain pre-treated aluminum collector, etching with 0.01-1 mol/L hydrochloric acid solution at 0.1-5 A for 1-300 seconds, washing using deionized water and anhydrous ethanol, spin-coating with 1-10 mg/mL graphene oxide solution at speed of 1000-3000 revolutions/minute for 5-30 seconds, drying in oven at 50-150 degrees C, entering into plasma chemical vapor depositing vacuum device, vacuumizing, filling hydrogen gas and argon gas, adjusting hydrogen gas flow rate to 1-100 standard cubic centimeters per minute (sccm), adjusting argon gas flow rate to 1-100 sccm, depositing at 100-1000 Pa at 20-500 W at 200-600 degrees C for 1-30 minutes, introducing carbon source gas at flow rate of 1-50 sccm, adjusting argon gas flow rate to 50-100 sccm, adjusting hydrogen gas flow rate to 1-20 sccm, depositing at 100-1000 Pa and 100-500 W at 200-600 degrees C for 1-120 minutes, stopping carbon source gas and hydrogen gas flow and cooling to room temperature under argon gas atmosphere.