▎ 摘　　要

NOVELTY - The graphene photo detector has a passivation layer (400) which is arranged in open surface of the doped graphene. A source is formed on the gate insulating layer (200). The insulating layer is formed on substrate (100) and drain electrode. The graphene channel is formed between the electrodes (500). A doped graphene is formed on the insulating layer to chemically absorb the dopant solution. The auric chloride is included in the interface of the graphene. The width of the graphene channel is provided from 3-15 mu m. USE - Graphene photo detector for optical device. ADVANTAGE - The oxidation/reduction reaction of the graphene surface is suppressed if the passivation layer is formed. The mobility of the electron is improved. The electrical and thermal conductivity of the graphene photo detector is ensured. The durability of the optoelectronic device is improved. The light deintercalation of water or oxygen and adsorption reaction is suppressed by passivation layer. The on/off classification of condition of the stabilized optical response is maintained without the change of the reference current. The passivation layer is formed on the channel region on the graphene, so that the chemical reaction occurred in the graphene surface is suppressed. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for the method for manufacturing graphene photo detector. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of the graphene photo detector. Substrate (100) Gate insulating layer (200) Graphene (300) Passivation layer (400) Electrode (500)