▎ 摘　　要

NOVELTY - The FET has an insulating substrate whose upper part is provided with a graphene trench region. A top gate region is formed on an upper part of the graphene trench region. Source and drain contact electrodes are arranged on two sides of the substrate, respectively. The graphene trench region and the source and drain contact electrodes are linked together. The graphene trench region is provided with monolayer graphite. Thickness of a graphene material is 0.8-1.2nm. The substrate is provided with an n-type or p-type silicon sheet. USE - FET. ADVANTAGE - The graphene material has high carrier mobility. The graphene trench region improves processing speed of the FET. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a method for manufacturing a FET. DESCRIPTION OF DRAWING(S) - The drawing shows a sectional view of a FET.