▎ 摘　　要

NOVELTY - Low dielectric and high heat conducting interface film comprises a substrate and a radiating layer. The radiating layer comprises 10-20 pts. wt. organic polymer, 90-100 pts. wt. boron nitride powder, 5-10 pts. wt. silicon dioxide, 0.1-0.3 pts. wt. bonding agent, 2-8 pts. wt. reinforcing agent, 2-4 pts. wt. dispersant, 50-100 pts. wt. polyethylene wax and 100-200 pts. wt. ethanol solution with mass fraction of 70-75%. USE - Used as low dielectric and high heat conducting interface film. ADVANTAGE - The film has high density, and has good heat conductivity, interference and folding resistance and a lower dielectric constant. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for Preparing low dielectric high heat conducting interface film comprises (1) weighing 10-20 pts. wt. organic polymer, 90-100 pts. wt. boron nitride powder, 5-10 pts. wt. silicon dioxide, 1-3 pts. wt. adhesive, 2 -8 pts. wt. reinforcing agent, 2-4 pts. wt. dispersant, 50-100 pts. wt. polyethylene wax, mass fraction is 70-75 % ethanol 100-200 pts. wt. and 1-3 pts. wt. adhesive, stirring uniformly, and adding 10-15 pts. wt. of modified silicon dioxide, stirring uniformly to obtain slurry, (2) coating the slurry prepared in the step 1) on the surface of the substrate, hot-pressing and molding and die-cutting to obtain the low dielectric high heat-conducting interface film.