• 专利标题:   Plasma-assisted graphene-based chemical vapor deposition device comprises machine frame, tubular heating furnace, quartz tube, microwave device, supporting mechanism, sliding track, outside wall slide rail, air inlet system, and gas source.
  • 专利号:   CN204490989-U
  • 发明人:   WANG Z
  • 专利权人:   XIAMEN GCVD MATERIAL TECHNOLOGY CO LTD
  • 国际专利分类:   C23C016/26, C23C016/513
  • 专利详细信息:   CN204490989-U 22 Jul 2015 C23C-016/26 201570 Pages: 8 Chinese
  • 申请详细信息:   CN204490989-U CN20085865 06 Feb 2015
  • 优先权号:   CN20085865

▎ 摘  要

NOVELTY - The new type utility claims have one kind based on chemistry gas phase depositing device is plasma assistant growing graphene, the device comprises machine frame, a tubular heating furnace, quartz tube and microwave device, the quartz tube by supporting mechanism fixed on machine frame above, the tube-type heating furnace chamber by sliding track connected on machine frame above the quartz tube outside wall radial slide, said device also comprises air inlet system, the air inlet system comprising source sum and sum for quartz tube, said quartz tube air inlet end from one quartz tube for sample end extending to quartz tube in, another end connected and sum source except in quartz tube, the microwave device in quartz tube surrounds outside the quartz air inlet tube outside. The utility model is new type firstly using microwave device for gas in plasma density distribution uniformity of plasma formation, again the quartz tube and carrying out heating growing graphene, deposition rate, film defect, film-forming effect is good.