▎ 摘　　要

NOVELTY - Synaptic transistor with long-term synaptic plasticity, comprises a substrate which is a semiconductor layer. The two ends of the semiconductor layer are provided with electrodes, and the semiconductor layer between the electrodes is covered with an ion glue layer. The electrode is source electrode and drain electrode. The semiconductor layer is an indium zinc oxide nanowire array and a Nafion(Sulfonated tetrafluoroethylene based fluoropolymer-copolymer)-graphene quantum dot blending layer covering the above. USE - Synaptic transistor with long-term synaptic plasticity. ADVANTAGE - The long-term plasticity of the device can be greatly increased. The selection of the function layer material of the synaptic transistor with bionic function can be enhanced. The excitatory synaptic current, double-pulse easy, peak voltage dependent plasticity, peak number dependent and peak frequency dependent plasticity of the transistor can be realized. The concentration ratio of the Nafion(Sulfonated tetrafluoroethylene based fluoropolymer-copolymer)-graphene quantum dot blending solution, rotating speed and time parameter in spin coating process can be controlled. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for preparing a synaptic transistor with long-term synaptic plasticity. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic structural diagram of a synaptic transistor with long-term synaptic plasticity (Drawing includes non-English language text).