▎ 摘　　要

NOVELTY - The system has a high-power laser output unit including a flat mirror (2) and a spherical mirror (3), which are used to focus a high-power femtosecond laser on a gas cell (4). A coherent EUV light generating portion includes the gas cell, which is used to generate a coherent EUV light from light output from the high-power laser output unit. A pin-hole (6), a graphene filter (7), and a zirconium (Zr) filter (8) are configured to remove a high-power laser beam from the coherent EUV light. An x-ray spherical mirror (10) is configured to focus the coherent EUV light on a zone-plate lens (12) and to improve optical efficiency. An x-ray flat mirror (11) is placed between the zone-plate lens and the x-ray spherical mirror to guide and reflect a beam, which is focused by the x-ray spherical mirror to the zone-plate lens. An order sorting aperture (OSA) is placed on the stage and configured to transmit only a first-order diffraction light of the focused coherent EUV light. USE - System for measuring an image of a pattern in a scanning type extreme ultraviolet (EUV) mask used process of manufacturing a semiconductor device. ADVANTAGE - The system can reduce cost and time in a mask manufacturing process, can measure an aerial image without a complex optical system for illumination, and can reconstruct aerial images for multiple illuminating conditions through a single measurement process. The light generating property and efficiency of an optical system is improved. The performance of an aerial image measuring system is improved. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of system for measuring an image of a pattern in a scanning type extreme ultraviolet mask used process of manufacturing a semiconductor device. 2Flat mirror 3Spherical mirror 4Gas cell 6Pin-hole 7Graphene filter 8Zirconium (Zr) filter 10X-ray spherical mirror 11X-ray flat mirror 12zone-plate lens