• 专利标题:   Graphene based nanometer line array manufacturing method, involves arranging metal electrodes on side parts of porous alumina template, respectively, and filling solution groove by electrolyte until nanometer line array is grown out.
  • 专利号:   CN104787720-A, CN104787720-B
  • 发明人:   REN D, YOU Z, BIAN W, GUO T, WEI F
  • 专利权人:   UNIV TSINGHUA
  • 国际专利分类:   B82B003/00, B82Y040/00
  • 专利详细信息:   CN104787720-A 22 Jul 2015 B82B-003/00 201567 Pages: 10 Chinese
  • 申请详细信息:   CN104787720-A CN10195086 22 Apr 2015
  • 优先权号:   CN10195086

▎ 摘  要

NOVELTY - The method involves arranging two metal electrodes on two side parts of a porous alumina template, respectively. A porous graphene thin film is transferred to one of the side parts of the porous alumina template. The porous graphene thin film is set on one of the metal electrodes after performing filtering process. Metal electrode sputtering process is performed to obtain electric source phase. A solution groove is filled by electrolyte until nanometer line array is grown out. USE - Graphene based nanometer line array manufacturing method. ADVANTAGE - The method enables realizing length control of a nanometer line in a simple and easy manner, avoiding the porous alumina template from being damaged during polishing process so as to improve product utilization rate. DESCRIPTION OF DRAWING(S) - The drawing shows a process flow diagram illustrating a graphene based nanometer line array manufacturing method.