▎ 摘　　要

NOVELTY - Preparation of high crystal quality graphene involves selecting silicon carbide substrate, etching the silicon carbide substrate to obtain pre-etched substrate with mesa structure, growing a three-bilayer periodicity silicon carbide material on the pre-etching substrate and pyrolyzing. USE - Preparation of high crystal quality graphene. ADVANTAGE - The method effectively isolates the mutual influence between the defects and realizes the perfect crystalline film on the etching table due to pre-etching of silicon carbide substrates, does not change the orientation of the atomic layer of the three-bilayer periodicity silicon carbide material in the (111) direction and avoids the generation of the step beam, thus producing higher quality graphene.