▎ 摘　　要

NOVELTY - The method involves spraying graphene dispersed solution on a substrate. Oxidation graphite is prepared, and hydrazine is added to the oxidation graphite, where concentration of the oxidation graphite is 0.001 to 100 mg per ml. The graphene dispersed solution is diluted by adding a mixture of ethylene glycol, dimethylformamide, N-methylpyrolidone and dimethyl sulphoxide. USE - Method for forming a graphene thin film of a semiconductor device. ADVANTAGE - The method enables formation of the graphene thin film with high quality, high conductivity and excellent transparency in an economic manner. DESCRIPTION OF DRAWING(S) - The drawing shows a graphical representation illustrating UV absorbance peak of a graphene thin film.