▎ 摘　　要

NOVELTY - A high temperature furnace tube comprises a process pipe (1) having a top cover (101) with a through hole. An air supply pipe (2) connected with the through hole on the process pipe top cover. A boat (3) comprising a supporting frame and a supporting plate. The supporting plate along the length direction of the supporting frame is distributed with multiple layers, for supporting multiple substrates (w). Each substrate is placed on each layer of supporting plate, and each supporting plate supports the whole bottom of each substrate. The process gas is introduced into process pipe through the through hole of the gas supply pipe. The material of the supporting plate is quartz, silicon carbide, diamond, graphite and/or graphene. The material of the supporting frame is quartz, silicon carbide, and/or silicon. USE - High temperature furnace tube for gas phase deposition in semiconductor process, oxidation annealing and for semiconductor power device and advanced semiconductor processing device. ADVANTAGE - The supporting plate along the length direction of the supporting frame is distributed with multiple layers for supporting multiple substrates, where each substrate is placed on each layer of supporting plate, and each supporting plate supports the whole bottom of each substrate, thus solving the problem of high temperature furnace tube in the existing technology of process tube, boat and substrate is easy to be deformed, improves the diffusion speed of the doped atoms in the silicon wafer, and improves the deposition rate of the oxide film to improve the production of the device. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic structural view of the high-temperature furnace tube. 1Process pipe 2Air supply pipe 3Boat 101Top cover wSubstrates