▎ 摘　　要

NOVELTY - Photodetector adopting grid modulation graphene/semiconductor schottky junction includes a substrate (08), a semiconductor layer is arranged on the substrate, an insulating layer is arranged on the semiconductor layer, and a graphene layer (04) is arranged on the insulating layer and portion of the semiconductor layer. The transparent passivation layer (07) and the piezoelectric grid layer (03) are arranged on the graphene layer, and the top electrode of the grid is arranged on the piezoelectric grid layer. The second metal electrode (05) forms a schottky contact with the semiconductor layer, and the first metal electrode forms an ohmic contact with the graphene layer. USE - Photodetector adopting grid modulation graphene/semiconductor schottky junction. ADVANTAGE - The photoelectric detector has simple structure, high reliability, small influence to the core structure of the manufacturing process, can control the light response of the device and prepares the photoelectric detector with high response degree and low dark current. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a method for preparing a photodetector using a gate-modulated graphene/semiconductor Schottky junction, which involves: (A) cleaning the surface of the substrate, and growing a buffer layer on the substrate; (B) growing a single layer of single crystal or a semiconductor layer of a combination of multiple semiconductor materials on the upper surface of the buffer layer; (C) applying photoresist on the semiconductor layer to obtain the growth area of the insulating layer, growing the insulating layer, and exposing the semiconductor layer by cleaning the photoresist; (D) growing or transferring the graphene layer on the surface of the insulating layer and the semiconductor layer, so that portion of the graphene layer is on the surface of the semiconductor layer and portion on the surface of the insulating layer; (E) using hard mask to cover the graphene layer, and the piezoelectric grid layer, the first metal electrode, the top electrode of the grid and the second metal electrode are sequentially obtained; and (F) covering the electrode portion with a hard mask on the surface of the device, and growing a transparent passivation layer. DESCRIPTION OF DRAWING(S) - The drawing shows the schematic view of photoelectric detector. Piezoelectric grid layer (03) Graphene layer (04) Second metal electrode (05) Transparent passivation layer (07) Substrate (08)