▎ 摘　　要

NOVELTY - Metal-graphite alkene plasmon element comprises substrate which is sequentially arranged from bottom to top, reflective layer, dielectric layer, graphene film, source voltage and drain metal layer and material layer. The substrate and the reflective layer serve as gates. The reflective layer is deposited on the substrate. The dielectric layer is deposited on the reflective layer. The graphene film covers the dielectric layer. The source and drain metal layers are deposited on the graphene film. The source and drain metal layers are turned on by graphene. USE - The element is useful for enhancing infrared spectroscopy detection (claimed). ADVANTAGE - The element realizes perfect combination of infrared absorption and high electromagnetic field enhancement and increases capacity of infrared spectrum detecting trace substances. DETAILED DESCRIPTION - Metal-graphite alkene plasmon element comprises substrate which is sequentially arranged from bottom to top, reflective layer, dielectric layer, graphene film, source voltage and drain metal layer and material layer. The substrate and the reflective layer serve as gates. The reflective layer is deposited on the substrate. The dielectric layer is deposited on the reflective layer. The graphene film covers the dielectric layer. The source and drain metal layers are deposited on the graphene film. The source and drain metal layers are turned on by graphene. A dielectric layer is arranged between the reflective layer and the graphene and provided with a parallel plate capacitor structure. A local region between the source and drain metal layers has a graphene periodic nanostructure. The graphene periodic nanostructure edge can generate local plasmons under the excitation of infrared light and the wavelet-vector matching of incident light and plasmon surface is realized. An INDEPENDENT CLAIM is also included for preparing metal-graphite alkene plasmon element, comprising (i) preparing metal reflective layer on the substrate by electron beam evaporation, thermal evaporation, magnetron sputtering, atomic layer deposition or molecular beam epitaxy, where the material of the substrate is silicon; (ii) preparing dielectric layer thin film on the reflective layer as non-infrared active dielectric substrate by electron beam evaporation, atomic layer deposition or molecular beam epitaxial growth using ultra violet lithography, exposing on electron beam and combining nano-imprint with plasma etching groove dielectric layer; (iii) preparing graphene films by standard mechanical lift-off processes or chemical vapor deposition; (iv) transferring the peeled graphene film onto the dielectric layer prepared above; (v) preparing the graphene periodic nanostructures by ultra-violet lithography and combining electron beam lithography and nanoimprint with plasma etching; and (vi) making the source electrode, drain metal layer and the grating layer using ultra-violet lithography, electron beam exposure, electron beam evaporation or thermal evaporation or magnetron sputtering or molecular beam epitaxial growth method. DESCRIPTION OF DRAWING(S) - The diagram shows a schematic representation of the metal-graphite alkene plasmon element.