▎ 摘　　要

NOVELTY - The method involves positioning a microstructure device chip (320A-320D) above a surface of a substrate (310), and providing a filler material (360A,360B) that is thermally conductive and includes graphene flakes (361A,361B), between the microstructure device chip and the substrate. The thermally conductive filler material includes a glue substance incorporating the graphene flakes. USE - Forming method of microstructure device such as integrated circuits. ADVANTAGE - Achieves heat dissipation and thermal management of semiconductor devices by exploiting superior thermal conductivity of graphene efficiently to achieve pronounced layer internal heat distribution which highly and efficiently transports heat energy from the microstructure device chip to the entire lead frame. DESCRIPTION OF DRAWING(S) - The drawing shows a cross-sectional view of the microstructure device. Substrate (310) Microstructure device chip (320A-320D) Passive cooling component (340) Filler material (360A,360B) Graphene flakes (361A,361B)