▎ 摘　　要

NOVELTY - Manufacture of semiconductor element involves forming opening portion (1c) which reaches back surface (3a) of catalyst layer (3) from side (1b) opposite to side (1a) of substrate in which catalyst layer is formed on side (1a), forming graphene (5) on back surface of the catalyst layer in the opening portion, and removing portion(s) of the catalyst layer. USE - Manufacture of semiconductor element used for electronic device. ADVANTAGE - In the semiconductor element, peeling of graphene is suppressed and stickiness between the substrates is hardly produced. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for semiconductor element, which has substrate with opening portion penetrated from side (1a) to side (1b), and graphene formed on region containing opening portion among one surfaces in substrate. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view explaining the manufacture of semiconductor element. Sides (1a,1b) Opening portion (1c) Catalyst layer (3) Back surface (3a) Graphene (5)