▎ 摘　　要

NOVELTY - The method involves executing Raman spectroscopy and heating of graphene. Gas is made to chemically react with the graphene. Conductivity of the graphene is controlled within plasma authentication hour by oxygen plasma power, oxygen flow rate, and state time of the graphene. A mask is provided with a pattern. The photosensitive material is coated in the graphene and is in contact with the oxygen plasma. An electromotion wiring is formed in the graphene. A charge trapping layer of a charge trap type non-volatile memory device is in contact with the photosensitive material. USE - Method for controlling electric property of graphene during manufacturing a semiconductor i.e. charge trap type non-volatile memory device (claimed). Can also be used for a sunlight device, CMOS image sensor, charge coupled device, optical device, transistor element and graphene resistor. ADVANTAGE - The method enables controlling electrical characteristic of the graphene using the oxygen plasma in an effective manner, precisely controlling the graphene resistance, and forming a graphene charge trapping layer on the graphene at a desired location with desired shape without utilizing expensive equipment. DESCRIPTION OF DRAWING(S) - The drawing shows a graphical representation of conductivity of graphene according to oxygen plasma authentication hour.