• 专利标题:   Method for manufacturing graphene thin film used in electronic device of e.g. biosensor, involves reducing graphene oxide thin film at predetermined temperature by carbon containing gas atmosphere.
  • 专利号:   JP2016047777-A
  • 发明人:   NEGISHI R, KOBAYASHI Y, MATSUZAKI M
  • 专利权人:   UNIV OSAKA
  • 国际专利分类:   C01B031/02, G01N027/00, H01L021/28, H01L021/336, H01L029/06, H01L029/78, H01L029/786, H01L051/05, H01L051/30
  • 专利详细信息:   JP2016047777-A 07 Apr 2016 C01B-031/02 201629 Pages: 27 English
  • 申请详细信息:   JP2016047777-A JP172628 27 Aug 2014
  • 优先权号:   JP172628

▎ 摘  要

NOVELTY - The method involves preparing a graphene oxide thin film. The graphene oxide thin film is reduced at a temperature of 1050 degrees C by a carbon containing gas atmosphere. A portion of graphene oxide flake is overlapped with the graphene oxide thin film. The carbon containing gas is formed from a mixture of ethanol, an acetylene and water vapor, a mixture of ethanol and water vapor, or a mixture of an acetylene, ethanol and water vapor. The flow ratio of the carbon containing gas and carrier gas is set to 1:500 and 1:5000. USE - Method for manufacturing graphene thin film used in electronic device of sensor (all claimed) e.g. biosensor used in pharmaceutical field and diagnostic medical field. ADVANTAGE - The mobility, electrical conductivity and electrical property of the graphene thin film are improved. The manufacturing process of graphene thin film is simplified and the manufacturing cost is reduced. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for an electronic device which includes a FET. The carrier mobility is set to more than 100 cm2/Vasterisks, by having a predetermined hole measurement. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of the biosensor. Substrate (1) Graphene thin film (2) Source electrode (3) Drain electrode (4) Gate electrode (13)