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  • 专利标题:   Bipolar retardant variable storage device, comprises substrate, lower electrode surface, rectification function layer, graphene layer, resistive dielectric layer, and upper electrode, where rectification layer is made of aluminum oxide.
  • 专利号:   CN105895800-A, CN105895800-B
  • 发明人:   LU N, LV H, LIU M, LIU Q, LIU S, LONG S, WANG Y, ZHANG K, ZHAO X
  • 专利权人:   INST MICROELECTRONICS CHINESE ACAD SCI, INST MICROELECTRONICS CHINESE ACAD SCI
  • 国际专利分类:   H01L045/00
  • 专利详细信息:   CN105895800-A 24 Aug 2016 H01L-045/00 201666 Pages: 12 Chinese
  • 申请详细信息:   CN105895800-A CN10252403 21 Apr 2016
  • 优先权号:   CN10252403

▎ 摘　　要

NOVELTY - A bipolar retardant variable storage device comprises substrate, lower electrode surface provided on the substrate, rectification function layer provided on the lower electrode layer, graphene layer provided on the rectification function layer, resistive dielectric layer provided on graphene layer, and upper electrode provided on the resistive dielectric layer, where the rectification function layer is made of aluminum oxide, titanium dioxide and magnesium oxide. USE - Bipolar retardant variable storage device. ADVANTAGE - The bipolar retardant variable storage device has good rectifying effect, improved device performance, reduced reset current and reduced power consumption. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a method for preparing bipolar retardant variable storage device.