• 专利标题:   Low temperature sputtered graphene transparent electrode thin film used in solar cell comprises soda-lime glass substrate plated with molybdenum thin film, photovoltaic copper-zinc-tin-selenium film layer, and p-n junction thin film.
  • 专利号:   CN114497249-A
  • 发明人:   MA J
  • 专利权人:   XIANG F
  • 国际专利分类:   C23C014/06, C23C014/35, C23C014/58, H01L031/032, H01L031/0445, H01L031/072, H01L031/18
  • 专利详细信息:   CN114497249-A 13 May 2022 H01L-031/0445 202256 Chinese
  • 申请详细信息:   CN114497249-A CN11560772 20 Dec 2021
  • 优先权号:   CN11560772

▎ 摘  要

NOVELTY - A low temperature sputtered graphene transparent electrode thin film comprises soda-lime glass substrate (1) plated with molybdenum thin film, photovoltaic copper-zinc-tin-selenium film layer (3) plated on the molybdenum thin film, and p-n junction thin film (11) plated on the surface of copper-zinc-tin-selenium film layer. The soda-lime glass substrate may also be replaced with a flexible substrate with sodium. USE - The low temperature sputtered graphene transparent electrode thin film is used in solar cell (claimed). ADVANTAGE - The invention avoids the loss of selenium sputtering. It ensures the batch production process of copper-zinc-tin-selenium with high conversion rate. It provides a low temperature sputtered graphene transparent electrode thin film solar cell that is suitable for mass production. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a process of producing low temperature sputtered graphene transparent electrode thin film. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of low temperature sputtered graphene transparent electrode thin film Sodium-lime glass substrate (1) Photovoltaic copper-zinc-tin-selenium film layer (3) p-n junction film (11)