▎ 摘　　要

NOVELTY - Measuring DNA hybridization using graphene modified high electron mobility transistor (HEMT), involves (a) constructing HEMT at 580 degrees C by molecular beam epitaxial deposition method using e.g. aluminum, depositing e.g. nickel and aurum, as source and drain of HEMT by plasma enhanced chemical vapor deposition method, depositing silicon dioxide, packing transistor and maintaining gate electrode exposed, (b) fixing DNA probe on the HEMT gate, and (c) detecting DNA hybridization by adding target DNA on HEMT gate fixed with DNA probe. USE - The method is useful for measuring DNA hybridization using graphene modified HEMT (claimed). ADVANTAGE - The method is simple, rapid and sensitive. DETAILED DESCRIPTION - Method for measuring DNA hybridization using graphene modified high electron mobility transistor (HEMT), involves (a) constructing HEMT at 580 degrees C by molecular beam epitaxial deposition method, layering gallium arsenide (GaAs) for 1 mu m, aluminum (Al)0.26 gallium (Ga)0.7 for 3 nm, silicon-doped aluminum gallium arsenide (AlGaAs) for 22 nm and GaAs and silicon-doped cap for 5 nm, depositing nickel, aurum germanium, nickel and aurum as source and drain of HEMT by plasma enhanced chemical vapor deposition method, where first nickel layer is deposited for 50 nm, aurum germanium layer is deposited for 204 nm, second nickel layer is deposited for 10 nm and aurum layer is deposited for 50 nm, depositing silicon dioxide as insulating layer onto the surface of the transistor, packing transistor using paraffin cover and maintaining gate electrode exposed, (b) fixing DNA probe to the HEMT gate by dispersing graphene in 0.1-10 mg/ml ethanol and mixing DNA probe solution with graphene dispersion in a volume ratio of 1:6-1:3, incubating mixture at 18-22 degrees C for 30-50 minutes, dropping mixture on HEMT gate and drying at 0-4 degrees C, where the DNA probe solution is prepared using 0.01-10 mu M phosphate buffer, and (c) detecting DNA hybridization by adding different concentration of target DNA on HEMT gate fixed with DNA probe, measuring current changes between source and drain and obtaining DNA hybridization current.