• 专利标题:   Interconnect structure for use in electronic device, has cap layer provided on surface of conductive wiring and which includes nanocrystalline graphene comprising nano-sized crystals.
  • 专利号:   EP3599638-A1, US2020035611-A1, JP2020017728-A, CN110752204-A, KR2020011197-A, US2020294928-A1
  • 发明人:   BYUN K, SHIN K, KIM Y, SHIN H, SONG H, LEE C, KIM C, CHO Y, BIAN Q, SHEN J, JIN Y, SHEN X, SONG X, LI C, JIN C, ZHAO L, BYUN K E, SHIN K W, HUN K Y, SHIN H J, SONG H J, LEE C S, CHO Y C
  • 专利权人:   SAMSUNG ELECTRONICS CO LTD, SAMSUNG ELECTRONICS CO LTD, SAMSUNG ELECTRONICS CO LTD
  • 国际专利分类:   H01L021/768, H01L023/532, H01L023/522, C01B032/186, H01L021/3205, H01L023/528, H01L021/02, H01L029/06, H01L029/16
  • 专利详细信息:   EP3599638-A1 29 Jan 2020 H01L-023/532 202015 Pages: 19 English
  • 申请详细信息:   EP3599638-A1 EP212973 17 Dec 2018
  • 优先权号:   KR086013

▎ 摘  要

NOVELTY - The interconnect structure (120) comprises a dielectric layer (121) including a trench (121a), a conductive wiring (125) filling an inside of the trench, and a cap layer (127) on the surface of the conductive wiring. The cap layer includes nanocrystalline graphene comprising nano-sized crystals. USE - Interconnect structure for use in electronic device (claimed). ADVANTAGE - The electrical resistance of a conductive wiring may be reduced by providing a cap layer including nanocrystalline graphene in the conductive wiring, improving electromigration resistance. Enables to reduce the occurrence of defects in the conductive wiring, limiting and/or preventing the conductive wiring from being damaged. DESCRIPTION OF DRAWING(S) - The drawing shows the sectional view of an electronic device having an interconnect structure. Interconnect structure (120) Dielectric layer (121) Trench (121a) Conductive wiring (125) Cap layer (127)