▎ 摘　　要

NOVELTY - The method involves performing spin-coating UV photoresist process on a CVD-grown graphene copper foil substrate. A copper foil is uniformly cut according to pre-required graphene sheet size. The copper foil is placed in copper foil etching solution. The copper foil etching solution is placed in a dark environment to completely corrode the copper foil substrate. The UV photoresist attached with a graphene is transferred to deionized water after the copper foil substrate is etched. The UV photoresist is transferred to a target substrate. Photolithography and development process is performed on the UV photoresist attached with the graphene. The UV photoresist is washed to obtain a patterned graphene. USE - Method for transferring graphene and performing photolithography process on a UV photoresist support layer. ADVANTAGE - The method enables reducing weak contact between the graphene and the substrate when removing a support layer so as to improve device manufacturing and performance analysis convenience. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic chart illustrating a method for transferring graphene and performing photolithography process on a UV photoresist support layer. (Drawing includes non-English language text).