▎ 摘　　要

NOVELTY - The method involves providing (S1) a substrate. A graphene layer is formed (S2) on an upper surface of substrate. A dielectric material layer is formed (S3) on an upper surface of the graphene layer. A supporting layer is formed (S4) on the upper surface of graphene layer. The dielectric material layer is covered by the supporting layer. A laminated structure is mechanically peeled off (S5) from the dielectric material layer and supporting layer from a surface of graphene layer. The laminated structure is transferred to a target substrate. The supporting layer is removed. The dielectric material layer is left on the surface of target substrate. USE - Method for manufacturing dielectric material and semiconductor structure (claimed). ADVANTAGE - The method enables realizing stripping of any dielectric material layer, transferring to any target substrate to form Van der Waals, reducing the dielectric material layer manufacturing process damage to the target substrate material, improving device performance and reducing manufacturing cost of the dielectric material layer. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a semiconductor structure. DESCRIPTION OF DRAWING(S) - The drawing shows the flowchart illustrating the method for manufacturing dielectric material and semiconductor structure. (Drawing includes non-English language text) Step for providing substrate (S1) Step for forming graphene layer on upper surface of substrate (S2) Step for forming dielectric material layer (S3) Step for forming supporting layer on upper surface of graphene layer (S4) Step for peeling off laminated structure mechanically (S5)