• 专利标题:   Graphene/copper copper sulfide composite material comprises two-dimensional structure array template which is formed on silicon wafer by using polystyrene microsphere array, Cu-Cu2S layer and graphene layer alternately set on template.
  • 专利号:   CN111504976-A
  • 发明人:   XU H
  • 专利权人:   QINGDAO CANYAO NEW MATERIAL TECHNOLOGY
  • 国际专利分类:   C23C014/06, C23C014/20, C23C014/35, G01N021/65
  • 专利详细信息:   CN111504976-A 07 Aug 2020 G01N-021/65 202073 Pages: 6 Chinese
  • 申请详细信息:   CN111504976-A CN10359307 29 Apr 2020
  • 优先权号:   CN10359307

▎ 摘  要

NOVELTY - Graphene/copper copper sulfide (Cu-Cu2S) composite material comprises two-dimensional structure array template which is formed on the silicon wafer by using polystyrene microsphere array, Cu-Cu2S layer and graphene layer alternately deposited on the template. The deposition thicknesses of the Cu-Cu2S layer and the graphene layer are respectively 50-100 naometer and 2-10 naometer. The Cu-Cu2S layer is obtained by co-sputtering Cu and Cu2S in mol ratio of 10:(1-2). USE - Graphene/copper copper sulfide composite material. ADVANTAGE - The graphene/copper copper sulfide composite material enhances the signal intensity of the detected probe molecule, overcome the dependency of the excitation light source, and broadens the application range of Raman analysis. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a method for preparing graphene/copper copper sulfide composite material, which involves: (A) using polystyrene microspheres to prepare a two-dimensional periodic structure array through self-assembly technology to obtain polystyrene colloidal sphere templates; (B) preparing Cu-Cu2S layer by magnetron sputtering; and (C) sputtering and depositing the graphene layer by the electron cyclotron plasma.