▎ 摘　　要

NOVELTY - Resistive random access memory device comprises at least one resistive memory cell, where each of resistive memory cell comprises non-junction field field-effect transistor (1) comprising active layer, extending along first direction, comprising channel region and first source/drain region and second source/drain region located at two ends of channel region in first direction. A gate dielectric layer (12) disposed on active layer and at least partially surrounding channel region. A gate disposed on one side of gate dielectric layer away from active layer and at least partially surrounding gate dielectric layer. A resistance change storage element comprises first electrode (21), second electrode (22) and resistance change layer between first electrode and second electrode. The first electrode is electrically connected with first source/drain region or second source/drain region of non-junction field field-effect transistor. USE - The device is useful in large data analysis, neural network and machine learning, and in non-volatile memory. ADVANTAGE - The device: integrates non-junction field field-effect transistor and resistive memory elements to form a 1T1R unit can efficiently reduce path leakage. The non-junction field field-effect transistor: is economical; and has a long channel region, and a large switching ratio. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for the preparing the resistance memory device. DESCRIPTION OF DRAWING(S) - The drawing shows a cross-sectional of the resistive random access memory device. Non-junction field field-effect transistor (1) Resistive switching memory element (2) Gate dielectric layer (12) Gate electrode (13) First electrode (21) Second electrode (22) Resistive layer (23)