• 专利标题:   Graphene-based microbolometer for UV, infrared and terahertz radiation detecting and sensing system, has graphene nanoribbon thin film for increasing sensitivity of detector by exposing graphene nanoribbon thin film to oxidation environment.
  • 专利号:   US9196766-B1
  • 发明人:   EGERTON E J, SOOD A K
  • 专利权人:   MAGNOLIA OPTICAL TECHNOLOGIES INC
  • 国际专利分类:   H01L029/06, H01L031/00, H01L031/028
  • 专利详细信息:   US9196766-B1 24 Nov 2015 H01L-029/06 201578 Pages: 12 English
  • 申请详细信息:   US9196766-B1 US870959 25 Apr 2013
  • 优先权号:   US638243P, US870959

▎ 摘  要

NOVELTY - The microbolometer has conductive terminals in electrical communication with a graphene nanoribbon thin film. The graphene nanoribbon thin film is tuned such that exposure of radiation induces a change in impedance between the conductive terminals sensed by a CMOS readout circuitry. The nanoribbon thin film increases sensitivity of a detector by exposing the nanoribbon thin film to an oxidation environment, which increases thermal coefficient of resistance (TCR) to excess of 4 percent per degree centigrade resulting in a noise equivalent delta temperature (NEDT) of less than 10 mK. USE - Graphene based microbolometer for a UV, infrared and terahertz radiation detecting and sensing system. ADVANTAGE - The microbolometer allows a detection circuit to provide electrical outputs for sufficient light detection from a nanotube article in proximity of a predefined region by use of preamplification in an efficient manner. DESCRIPTION OF DRAWING(S) - The drawing shows a cross-sectional view of a photo-FET device structure incorporating a graphene layer or multilayer. Source (701) Drain contact (702) Silicon oxide layer (703) Substrate (704) Graphene layer (705) CMOS compatible thin film metal (706) Metal or oxide gate electrode (707)