• 专利标题:   Temperature-sensing device has substrate, gate electrode, gate insulating film, active layer containing regenerated graphene oxide, source and drain electrodes, and encapsulation layer.
  • 专利号:   KR2014118286-A
  • 发明人:   LEE N E, QUANG T T, KIM D I
  • 专利权人:   INTELLECTUAL DISCOVERY CO LTD
  • 国际专利分类:   C01B031/02, G01K007/01
  • 专利详细信息:   KR2014118286-A 08 Oct 2014 G01K-007/01 201470 Pages: 14
  • 申请详细信息:   KR2014118286-A KR033910 28 Mar 2013
  • 优先权号:   KR033910

▎ 摘  要

NOVELTY - A temperature sensing device has gate electrode formed on substrate, gate insulating film formed on the gate electrode, active layer containing regenerated graphene oxide formed on gate insulating film, source and drain electrodes formed on active layer, and encapsulation layer of the active layer. USE - Temperature-sensing device (claimed). ADVANTAGE - The temperature-sensing device has suppressed effect on electrical characteristics. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for manufacture of temperature-sensing device.