▎ 摘　　要

NOVELTY - The method involves forming a silicon hole on a silicon substrate (1). An insulating layer (2) is formed between a surface of the silicon substrate and an inner wall of the silicon hole. A barrier layer (3) is formed on the insulating layer. A catalytic metal layer (4) is formed on the barrier layer. A graphene composite structure layer (5) is arranged on the catalytic metal layer and the surface of the silicon substrate. A dry film is exposed to form a dry film layer (6). A seed layer (7) is formed on the silicon hole. The silicon hole is filled with conductive material. USE - Graphene composite structure-based three-dimensional silicon through-hole vertical interconnection method. ADVANTAGE - The method enables adopting thermodynamics and mechanical characteristics of graphene material to avoid high-frequency signal electromagnetic coupled crosstalk related difficulties. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of a graphene composite structure-based three-dimensional silicon through-hole vertical interconnection system. Silicon substrate (1) Insulating layer (2) Barrier layer (3) Catalytic metal layer (4) Graphene composite structure layer (5) Dry film layer (6) Seed layer (7)