▎ 摘　　要

NOVELTY - A nano-electronic switching device comprises a graphene patch having a diamond shape formed by a pair of opposed graphene triangular shapes sharing a common base, where each has unreconstructed edges. The nano-electronic switching device further comprises a pair of device-interconnecting leads formed from graphene nano-ribbons integrally connected to the graphene patch. The graphene diamond-shaped patch has at least two stable magnetic states dependent upon the relative magnetization of the respective triangular shapes. USE - As nano-electronic switching device for selectively blocking and passing current; as graphene magnetic-based non-volatile memory device (claimed) in microelectronic industry; and as carbon-based electronic devices. ADVANTAGE - The use of diamond-shaped graphene nano-patches as non-volatile switching elements exhibits transitions between high and low conductance states based on changes of magnetic ordering of these states. The non-magnetic reconstructed graphene nano-ribbons are used as non-invasive leads to implement the switching elements as carbon-nanoflake based memories and transistors. The graphene nano-patch shapes of certain geometries provide passive electric-field sources such as to establish initial bits of information saved in graphene-based memories. The interconnecting graphene nano-ribbons achieve faster and higher density non-volatile magnetic switching units than currently available. The switching electronic unit based on carbon and a new interconnecting architecture exhibits advantages over existing devices. These innovations reduce manufacturing complexities and open a new technology that can provide many more decades of continuous improvement at a time when silicon-based technologies are coming to an end of Moore's law. The switching unit and interconnects are fully planar (up to a thickness of 1 atomic layer). Having three basic elements (diamond-shaped graphene nano-patches, interconnecting graphene ribbons and electric field sources) carved from a single carbon layer (graphene) represents a dramatic advantage over traditional microelectronic methods with respect to reducing manufacturing complexities and therefore increasing the yield of devices. The device exhibits improved device density. Having a switching unit as simple as a mere diamond-shaped piece of carbon presents advantages over the more complicated switching units needed in current CPU's (2 silicon transistors per switching unit) and memories (6 silicon transistors per switching unit). The switching device exhibits a number of unique magnetic and electric properties that Applicants have discovered to be associated with the ''poker-diamond'' shape for graphene nano-patches. The magnetic alignment of isolated diamond-shaped nano-patches, and hence the state of switching unit, can be controlled by an electric field applied parallel to the main diagonal of the diamond. DETAILED DESCRIPTION - INDEPENDENT CLAIMS are included for the following: (1) an electronic switch for selectively blocking and passing current, comprising a diamond-shaped graphene nanoflake formed by a pair of opposed graphene triangles having a shared base and unreconstructed edges. The switch further comprises a pair of device-interconnecting leads formed from graphene nano-ribbons integrally connected to the graphene nanoflake; (2) a source of electric-field embedded in a nano-scale circuit comprising: a nano-patch graphene-based system having interior carbon atoms arranged in a two-dimensional honeycomb lattice; and passivated carbon atoms along an exterior perimeter of the lattice and forming electrically polarized bonds, where the bonds exhibits electric-dipole-moment vectors aligned along an axis of each bond, thus forming a net electric dipole moment based upon the number of orientation of passivated carbon atoms; and (3) a graphene magnetic-based non-volatile memory device comprising: triangular-shaped graphene nano-patches forming respective geometric diamonds and controlled in combination to form a memory device, where the memory state of each memory device is controlled by independent potentials applied to respective triangular nano-patches of each diamond to provide a selected magnetic ordering of each diamond and thus its memory state.