• 专利标题:   Graphene FET based radiation hardened space earth orbit satellite sensor for detecting electromagnetic radiation affecting astronaut in space, has gate formed on silicon oxide layer, and source and drain contacts formed on silicon substrate.
  • 专利号:   US9508885-B1
  • 发明人:   LI M J, CHEN Z
  • 专利权人:   NASA US NAT AERO SPACE ADMIN
  • 国际专利分类:   G01N027/403, H01L031/028, H01L031/119
  • 专利详细信息:   US9508885-B1 29 Nov 2016 G01N-027/403 201683 Pages: 14 English
  • 申请详细信息:   US9508885-B1 US843697 02 Sep 2015
  • 优先权号:   US843697

▎ 摘  要

NOVELTY - The sensor (100) has a gate (105) formed on a silicon oxide layer onto arrays of graphene nano-ribbon channels used in conjunction with undoped substrates for enhancing sensitivity of measuring energy of radiation deposited in an absorber with applying an electric field between an electrically biased substrate electrode and a graphene channel forming an intense field around graphene nano-ribbons with attracted ionized charges to a location directly under the graphene layer before recombination process occurs. A source contact and a drain contact are formed on a silicon substrate (102). USE - Graphene FET based radiation hardened space earth orbit satellite sensor for use in an integrated circuit package (claimed) for detecting electromagnetic radiation affecting humans e.g. astronauts, in a space for manned spaceflight missions. Uses include but are not limited to gamma rays, x-rays, charged particles e.g. electrons/protons, and heavy ions e.g. Argon. ADVANTAGE - The sensor monitors and protects astronauts in space missions from radiation. The sensor is portable and highly-sensitive, and has high energy resolution, long life time, low power, high reliability and repeatability, high thermal stability, high design flexibility and low cost, and can perform multi-purpose functions. DESCRIPTION OF DRAWING(S) - The drawing shows a sectional view of a graphene FET based radiation sensor. Graphene FET based radiation hardened space earth orbit satellite sensor (100) Atomic-layer-thick graphene (101) Silicon substrate (102) Source (104) Gate (105)