▎ 摘　　要

NOVELTY - Method for forming the metallization structure, involves providing a substrate, forming a graphene oxide layer on the substrate, modifying the graphene oxide layer to form a graphene oxide catalytic layer, and performing a metallization process on the graphene oxide catalytic layer. USE - The method is used for forming the metallization structure, which is used for the metallization of fine pitch of semiconductor and its package, fine pitch wires of printed circuit board, touch panels, displays, and fine electrodes of solar cells. ADVANTAGE - The method prepares fine pitch wire metallization, improves the reliability and yield, eliminates an etching process, avoids warpage, reduces undercut, and reduces the formation of poor metal profile or wire collapse.