▎ 摘　　要

NOVELTY - The method involves exposing an exposure mask that having a circuit pattern on a graphene thin film in close contact with a photoresist. The exposure mask is divided and exposed, and alignment is performed before each exposure. The exposure mask and the wafer are attracted to each other or repelled by Coulomb force. The exposure mask and the photoresist are exposed by filling the periphery with a small molecule and having good substance permeability, such as hydrogen gas or helium gas. USE - Adhesive exposure method used for lithography when manufacturing semiconductor integrated circuit. ADVANTAGE - The graphene thin film has good conductivity, is light and tough, and has a small friction coefficient. The exposure mask of the graphene thin film is aligned and brought into close contact with a very small force. The adhesion force is easily adjusted, and a repulsive force is given on the contrary. The exposure mask is quickly adhered to the photoresist. The hydrogen molecules and helium molecules easily pass through the graphene thin film and move between the photoresist and the exposure mask, so that the exposure mask is quickly separated from the photoresist and moved to the next exposure location. The graphene thin film has a very good thermal conductivity, and the temperature of the exposure mask is easily controlled by the wafer and the surrounding gas.