▎ 摘　　要

NOVELTY - The detector has an N-type germanium substrate (2) whose lower surface is arranged with an N-type germanium base electrode (1). A graphene contact electrode (4) is covered with an insulating layer (3). The graphene contact electrode is paved with a P-type graphite film (5). The P-type graphite film is arranged on the N-type germanium substrate to form a Schottky contact. The insulating layer is made of silicon nitride, silicon dioxide or aluminum oxide material. The N-type germanium substrate is made of silver, gallium arsenide material or indium material. USE - P-type graphene thin film and N-type germanium Schottky near infrared photoelectric detector. ADVANTAGE - The detector has high response speed and low dark current noise. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a P-type graphene thin film and N-type germanium Schottky near infrared photoelectric detector manufacturing method. DESCRIPTION OF DRAWING(S) - The drawing shows a perspective view of a P-type graphene thin film and N-type germanium schottky near infrared photoelectric detector. N-type germanium base electrode (1) N-type germanium substrate (2) Insulating layer (3) Graphene contact electrode (4) P-type graphite film (5)