• 专利标题:   Production of graphene used in manufacture of semiconductor devices, involves providing substrate, focusing laser beam in presence of carbon doping gas and continuing focusing laser beam to photolytically react carbon with substrate.
  • 专利号:   US8617669-B1
  • 发明人:   KAR A, QUICK N R
  • 专利权人:   UNIV CENT FLORIDA PARTIAL ASSIGNMENT
  • 国际专利分类:   C23C016/00, C23C008/00
  • 专利详细信息:   US8617669-B1 31 Dec 2013 C23C-008/00 201405 Pages: 34 English
  • 申请详细信息:   US8617669-B1 US928229 07 Dec 2010
  • 优先权号:   US407738, US928229

▎ 摘  要

NOVELTY - A substrate (20) is provided, and a laser beam is focused in the presence of a carbon doping gas to induce two photon photolytic decomposition of the carbon doping gas only near the gas-substrate surface interface at the laser focal point to produce a plane of atomic carbon with carbon-carbon bonds in a hexagonal array. The laser beam is continuing focused to photolytically react the carbon with the substrate to grow graphene. USE - Production of graphene used in manufacture of semiconductor devices. Uses include but are not limited to conductive tabs, interconnects, vias, wiring patterns, resistors and capacitors. ADVANTAGE - The graphene is efficiently produced with excellent thermal conductivity and electrical property. DESCRIPTION OF DRAWING(S) - The drawing shows the side view of air-tight chamber with thermal energy beam impinging on non-wide bandgap material. Non-wide bandgap material (3) Apparatus (5) Wide bandgap material (10) Substrate (20) Thermal energy beam (40)