▎ 摘　　要

NOVELTY - The device has an oxidation prevention layer arranged on an area of a graphene layer to cover a side of the graphene layer. An electrode is arranged on the area of the graphene layer that is formed on a semiconductor layer. A light emitting structure is formed with another semiconductor layer. An active layer is positioned between the semiconductor layers. The oxidation prevention layer is formed with a light-transmissive insulating layer and made of silicon nitride or silicon oxide. Thickness of the oxidation prevention layer is 10-100 nanometer. USE - Light emitting device. ADVANTAGE - The device avoids reduction of thickness of the graphene layer due to oxidation and prevents an emission area of the graphene layer from being reduced. DESCRIPTION OF DRAWING(S) - The drawing shows a perspective view of a light emitting device in partial section.