1. 平台首页
  2. 国际专利信息
  • 专利标题:   Preparation of germanium-doped graphene involves placing substrate in catalytic reactor under vacuum condition, adding carbon element and germanium element to reactor and processing.
  • 专利号:   CN103964417-A, CN103964417-B
  • 发明人:   LIN Z
  • 专利权人:   FUJIAN HUIRUI MATERIALS TECHNOLOGY CO, FUJIAN HUIRUI MATERIALS TECHNOLOGY CO
  • 国际专利分类:   C01B031/04, C01B032/186, C01B032/194
  • 专利详细信息:   CN103964417-A 06 Aug 2014 C01B-031/04 201469 Pages: 5 Chinese
  • 申请详细信息:   CN103964417-A CN10034451 29 Jan 2013
  • 优先权号:   CN10034451

▎ 摘　　要

NOVELTY - Preparation of germanium-doped graphene involves placing a substrate in a catalytic reactor under vacuum condition, adding carbon element and germanium element to the reactor and processing. USE - Preparation of germanium-doped graphene (claimed). ADVANTAGE - The method efficiently provides germanium-doped graphene with high carrier mobility, without damaging hexagonal structure of graphene.