▎ 摘　　要

NOVELTY - Film forming method involves: (S1) performing a loading step of loading a substrate into a processing container; (S2) performing a first step of forming the graphene film on the substrate with a plasma of a first process gas comprising a carbon-containing gas; (S3) performing a second step of forming a doped graphene film on one or more of the substrate and the graphene film with a plasma of a second process gas comprising a dopant gas. USE - The method is used for forming a film. ADVANTAGE - The method controls the positional ratio of nitrogen doping with respect to the graphene film. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a film forming apparatus, comprising a processing container capable of accommodating a substrate and a control unit, where the control unit is configured to control the film deposition apparatus to load the substrate into the processing container, the control unit is configured to control the film deposition apparatus to form a graphene film on the substrate with plasma of a first processing gas containing a carbon-containing gas, and the controller is configured to control the film deposition apparatus to form a doped graphene film on one or more of the substrate and the graphene film with a plasma of a second process gas containing a dopant gas.