• 专利标题:   Silicon-based negative electrode material comprises silicon-based inner core and shell is coated on the surface of inner core, housing includes first cladding and second cladding, first cladding includes nitrogen-doped graphene.
  • 专利号:   CN110993925-A
  • 发明人:   TAN Q, XU Y
  • 专利权人:   CAS LANGFANG PROCESS ENG INST, INST PROCESS ENG CHINESE ACAD SCI
  • 国际专利分类:   H01M010/0525, H01M004/36, H01M004/38, H01M004/48, H01M004/485, H01M004/583
  • 专利详细信息:   CN110993925-A 10 Apr 2020 H01M-004/36 202034 Pages: 14 Chinese
  • 申请详细信息:   CN110993925-A CN11423864 31 Dec 2019
  • 优先权号:   CN11423864

▎ 摘  要

NOVELTY - Silicon-based negative electrode material comprises silicon-based inner core and shell is coated on the surface of the inner core. The housing includes first cladding and second cladding. The first cladding includes nitrogen-doped graphene, nitrogen-doped hydrogen-containing lithium titanium oxide and nitrogen-doped hexagonal phasecomposite of tungsten oxide. The second coating is mesoporous carbon layer formed by carbonization of polymer. USE - Silicon-based negative electrode material. ADVANTAGE - The silicon-based negative electrode material improves structure and cycle stability of the silicon-based negative electrode material and cycle performance of the silicon-based negative electrode material. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a method for preparing silicon-based negative electrode material, which involves: (A) dispersing silicon-based material and the first coating in solvent to obtain dispersion liquid, spray drying to obtain core material, dispersing triblock copolymer, amino alcohol and core material in solvent to obtain dispersion; (B) adding dopamine to the dispersion to carry out the polymerization reaction; and (C) carbonizing in inert atmosphere to obtain silicon-based anode material.